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| inchange semiconductor isc product specification isc silicon npn power transistor BU426 description collector-emitter sustaining voltage- : v ceo(sus) = 375v(min) high switching speed applications designed for switch-mode ctv s upply systems applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 800 v v ces collector-emitter voltage v be = 0 800 v v ceo collector-emitter voltage 375 v v ebo emitter-base voltage 10 v i c collector current-continuous 6 a i cm collector current-peak 10 a i b b base current-continuous 2 a i bm base current-peak 3 a p c collector power dissipation @ t c =25 70 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.1 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BU426 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.1a ;i b = 0; l= 25mh b 375 v v ce( sat )-1 collector-emitter saturation voltage i c = 2.5a; i b = 0.5a 1.5 v v ce( sat )-2 collector-emitter saturation voltage i c = 4a; i b = 1.25a b 3.0 v v be( sat )-1 base-emitter saturation voltage i c = 2.5a; i b = 0.5a 1.4 v v be( sat )-2 base-emitter saturation voltage i c = 4a; i b = 1.25a b 1.6 v i ces collector cutoff current v ce =800v; v be = 0 v ce =800v; v be = 0;t j =125 1.0 2.0 ma i ebo emitter cutoff current v eb = 10v; i c =0 10 ma h fe dc current gain i c = 0.6a ; v ce = 5v 15 60 switching times t on turn-on time 0.6 s t stg storage time 3.5 s t f fall time i c = 2.5a; i b1 = 0.5a; i b2 = -1a; v cc = 250v 0.15 s isc website www.iscsemi.cn 2 |
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